GLOBALFOUNDRIES® (GF®) collaborates with forward-thinking visionaries to make fast, seamless and reliable mobile connectivity and richer experiences a reality for consumers—connectivity and experiences that bring the world to their fingertips, all the time and from anywhere.
Cellular radio FEMs
5G fundamentally changes the cellular radio landscape. GF mmWave and sub-6 GHz SOI solutions are designed to handle the performance, power, area and complexity challenges 5G brings to cellular front-end modules (FEMs).
GF 5G cellular radio solutions
5G mmWave cellular FEMs using 45RFSOI
45RFSOI combines high transmission power capabilities with industry-leading mmWave performance and reliability for beamformers and integrable low-noise amplifiers (LNAs), power amplifiers (PAs) and switches in 5G mmWave cellular front-end module (FEM) applications.
More than one billion dollars in 45RFSOI design wins to date.*
Industry’s only Foundry with in-house mmWave test capabilities, which build on two decades of RF leadership & expertise.
45RFSOI-based PAs deliver the high power gain and efficiency—up to 23 dBm Psat at > 40% PAE‡—to extend battery life, and offer reliability of up to 10-year operation.
45RSOI lets you integrate multiple RF elements into mmWave FEMs that have superior transmission power—or develop beamformers that use fewer chips for smaller, more cost-effective arrays.
45RFSOI offers an optimized BEOL and high-resistivity substrate combined with device stacking and low Ron advantages for high-quality connectivity at mmWave frequencies.
*For both mobile and wireless infrastructure applications.
‡ At 26 GHz
Integrated 5G mmWave cellular FEMs & TRXs using 22FDX RF and 22FDX RF+
22FDX™ RF and 22FDX RF+ enable the integration of low noise amplifiers (LNAs), power amplifiers (PAs) and switches with the transceiver (TRX). Designers can take advantage of a highly integrated or single-chip mmWave radio architecture that incorporates critical RF elements for 5G mmWave mobile devices and that delivers the superior RF performance and power efficiency their applications demand, in a streamlined footprint that can help reduce system bill of material costs.
Two of top three 5G mmWave FEM design companies are designing with 22FDX RF.*
22FDX RF & 22FDX RF+ are the industry’s only solutions enabling world-class power and performance benefits in a single-chip 5G mmWave FEM SoC.
22FDX RF+ extends GF 5G leadership by offering 30% better Ron*Coff and insertion loss performance, enabling stronger, more reliable connections.†
22FDX RF and RF+ offer up to a 40% logic scaling advantage‡ and are the industry’s only solutions that enable fully integrated 5G mmWave SoCs with best-in-class performance and power benefits, so you can leverage the saved space to add other advanced features.
22FDX RF and RF+ support up to 10% longer battery life‡ with PAs that deliver a combination of performance, power and thermal efficiency advantages.
22FDX RF and RF+ provide noise figure and switch insertion loss benefits that help boost signal quality and extend signal reach up to 6% for fewer dropped connections and better sounding calls.◊
* Current estimate based on design win pipeline.
‡ Compared to GF 28 nm bulk CMOS. Benefits will vary with chip/system design.
† Compared to 22FDX RF.
◊ Assumes 28 GHz band, TX and RX antenna gain of 20 dB, line of sight communication. Benefits will vary with chip/system design.
5G sub-6 GHz cellular FEMs using 8SW RF SOI
8SW is the most advanced RF SOI solution in the GF RF portfolio. Take advantage of its high linearity and gain, low noise figure and industry-leading switch and low-noise amplifier (LNA) features for outstanding performance in premium and high-tier 5G sub-6 GHz mobile front-end modules (FEMs).
The top three 5G sub-6 GHz FEM design companies are using GF 8SW.*
8SW is industry’s 1st fully qualified high-volume RF SOI Foundry solution on 300 mm wafers.
8SW helps support high-performance connectivity from anywhere by combing low insertion loss and high RF voltage/power-handling capabilities with world-class NF and Ron*Coff metrics.
8SW’s exceptional Ron*Coff performance and 1.8 V/1.2 V standard cell libraries help stretch the time needed between battery charges.
With high gain, thick top level metals and all-copper interconnects, 8SW is optimized to maximize signal strength for higher quality connections.
* Based on revenue TAM.
5G sub-6 GHz & 4G LTE cellular FEMs using 7SW RF SOI
7SW RF SOI is an established solution in the GF RF SOI portfolio and qualified in multiple, globally distributed fabs to help ensure worry-free supply. It is optimized for 5G sub-6 GHz and 4G LTE FEM switch and low noise amplifier (LNA) applications. With billions of chips already shipped to industry-leading FEM IC companies, 7SW offers great performance for entry and mid-tier smartphones, smart watches and other connected mobile devices.
7SW delivers excellent linearity combined with options that allow designers to make critical Ron*Coff vs. power handling trade-offs to meet design performance goals.
Featuring LNA-optimized transistors and dual oxide and trap rich substrate options, 7SW offers LNA performance and noise suppression benefits to minimize disconnects and extend reception range.
Featuring low-leakage logic libraries and high Vt FETs that minimize standby power consumption, 7SW is designed to help you get most out of each battery charge.
AMOLED display driver ICs using 28HV, 40HV and 55HV solutions
GF is an industry leader in premium-tier display drivers, ready to meet your design needs with high voltage AMOLED solutions spanning 28 nm to 55 nm high-voltage technology platforms. The portfolio is complemented by a suite of in-house and third party intellectual property (IP) optimized for display drivers with touch controllers that is designed to help you accelerate time to-market.
GF is only Foundry in production with a 28 nm AMOLED DDIC solution.
GF has already shipped > 150K DDIC wafers.‡
Meet resolution requirements and form-factor constraints with the industry’s smallest Foundry 28 nm SRAM bitcell (0.12 µm2).
A gate-first MV/HV-friendly layout (8 V / 20-25 V) eliminates gate length restrictions to simplify design while the high-K metal gate platforms deliver power, performance and area advantages.
GF’s 28HV, 40HV and 55HV solutions are already in volume production, with high yields.
‡ Combined 28 and 55 nm HV shipments.
GF solutions for security ICs in smartphones and wearables, which are manufactured in our EAL6-certified fabs in Dresden, Germany and Singapore, span 40, 28 and 22 nm technology platforms and support a broad range of security implementations and transaction types, including UICC, ID, payment tokens and cryptographic keys.
GF offers chip designers a range of cost-effective, security-optimized semiconductor solutions to choose from when developing the products users and businesses count on to enable secure transactions, protect assets and safeguard data.
GF solutions for security ICs in smartphones and wearables span 40, 28 and 22 nm technology platforms and are manufactured in our EAL6-certified fabs in Dresden, Germany and Singapore and support a broad range of security implementations and transaction types, including UICC, ID, payment tokens and cryptographic keys. The solutions feature cost-effective embedded non-volatile memories (eNVM) and low-power technologies with RF integration, which make them excellent choices for secure NB-IoT, NFC, UWB and Wi-Fi applications.
GF has shipped more than 2 billion units of secure NFC chips to clients to support premium tier smartphones.
Audio & Power Management
Crystal clear audio. Longer battery life. Small form factors that don’t sacrifice performance. Chip designers developing audio amp and power management ICs must balance space constraints and battery life factors with the exceptional performance and advanced functions users have come to expect in products they now rely on every day, from smartphones to smart headsets to wearables.
Audio amps using 55, 130 and 180 nm BCDLite® solutions
GF’s portfolio of audio amp solutions is designed to deliver exceptional sound quality in power and area-efficient products. Our high-volume manufacturing capabilities in globally distributed fabs help ensure you can get your hardware to market faster, and in the quantities you need to meet your customers’ demands.
5 of top 7 smartphone companies use GF audio amp solutions.*
GF has shipped more than 3 billion high-end audio amp units.
The advanced power monitoring offered by GF 55, 130 and 180 nm BCDLite audio amp solutions enables superior audio playback while also protecting the device speakers.
Our BCDLite audio amp solutions feature integrated inductors, eNVM for code storage and high density logic so that you can integrate DSPs, enabling smaller solutions that save valuable board area.
Leverage best-in-class RDSon & BVDSS for switching noise, loss and power benefits designed to deliver a better listening experience.
Power management ICs using 55, 130 and 180 nm BCDLite® solutions
The GF portfolio of BCDLite power management solutions spans nodes ranging from 55 nm to 180 nm and is optimized for battery, single-rail, audio and haptics power-management unit (PMU) applications in mobile devices. The solutions enable designers to develop high-efficiency, low-leakage power management ICs (PMICs) that can extend battery runtime while integrating up to 50% digital content into smaller form factors.
High-volume GF manufacturing capabilities in globally distributed fabs help ensure that clients can get their hardware to market faster and in the quantities they need to meet demand.
GF is engaged with PMIC suppliers for two of the top three most popular smartphones in designing their next advanced products with GF BCDLite power management solutions.
With voltage ratings ranging from 5 volts to 100 volts, GF BCDLite solutions enable chip designers to find exactly the right fit to optimize PMU blocks for battery management, audio, system CPU, haptics, sensors or single rail applications in smartphones, smart watches, hearables and more.
With a rich IP library and 250+ design elements to choose from, including power FETs, capacitors, bipolar devices, integrated inductors and multiple memory options for security code/key storage, GF BCDLite solutions enable designers to optimize their hardware.
By offering best-in-class RDSON & BVDSS, GF BCDLite solutions give designers the ability to develop designs that optimize the footprint to output power ratio.
Imaging and 3D sensing
As 5G takes hold, more reliable, responsive connectivity is powering innovations in mobile imaging—how content is captured and created—that add a wow factor to the user experience. 3D sensing and hyper-spectral sensors, 8K resolution, higher frame rates and new compression formats are just some of the breakthroughs industry visionaries are exploring to bring those more compelling, immersive experiences to life.
Image sensor providers from the industry’s top ten are leveraging
GF logic solutions for stacking with image sensors.
GLOBALFOUNDRIES® (GF®) is arming industry leaders with advanced-node logic solutions for stacking with CMOS image sensors. These logic dies are the interface between the CMOS image sensor and the application processor in mobile phones. Our high-volume manufacturing of these solutions offers supply assurance for hardware our customers can count on, in the volumes they need.
Our logic solutions enable higher resolution images with sharper and faster autofocus, even in low light, so consumers can enjoy new levels of detail and clarity. These advances are designed to help deliver visual experiences that are better than real life, with darker darks, more vibrant colors and sharper edges to help families, friends and colleagues feel more connected, even when miles—or continents—apart.
The need for innovation to keep pace with rising user expectations for premium mobile imaging experiences continues to grow, and GF is looking beyond optical imaging. Our future-ready roadmap includes solutions for LiDAR 3D-mapping optimized for augmented reality and sensing applications that enhance imaging beyond the visible spectrum. These solutions feature new sensing devices, including single-photon avalanche diode (SPAD)-based time-of-flight sensors for 3D depth sensing and photodiodes for near-infrared and shortwave infrared sensors.
Wi-Fi 5 provided consumers with a true wired complement, helping address the relentless need for more speed and enabling user-pleasing experiences like buffer-free, high-def video streaming. Wi-Fi 6 and 6E are poised to take these advances to new levels, complementing the advantages 5G brings to outdoor networks by delivering superfast performance for increasingly congested indoor networks. This next evolution of Wi-Fi will provide lower latency, longer battery life and higher data throughput for even better user experiences—benefits that get supercharged with the rollout of Wi-Fi 7 later this decade and that make choosing the right semiconductor solution more critical.
Wi-Fi 6, 6E and 7 rollouts will provide ever faster, worry-free wireless access and enhanced user experiences, but those benefits come with increasingly rigorous FEM performance specifications, particularly those related to non-linearity. Meeting—and beating—those requirements means making the right semiconductor choices. GLOBALFOUNDRIES® (GF®) has you covered with differentiated Wi-Fi solutions.
- Integrated Wi-Fi FEMs with performance-optimized PA using 130RFSOI
- Wi-Fi FEM switches, LNAs and PAs using 8SW and SiGe PA solutions
- Integrated Wi-Fi FEM SoCs using 22FDX™ RF and 22FDX RF
- Integrated Wi-Fi FEM SoCs using 12LP RF
Wi-Fi speeds from mobile devices
will triple by 2023, to > 90 Mbps *
Wi-Fi 6 will improve throughput per user by 4x in dense environments*
* Cisco Annual Internet Report (2018–2023), March 2020
Integrated Wi-Fi FEMs with performance-optimized PA using 130RFSOI
130RFSOI balances integration, area, performance and value for integrated Wi-Fi FEM applications in smartphones, tablets and wireless access points. It features an innovative EDNMOS device that delivers outstanding power amplifier (PA) performance, complemented by high power handling (Pmax) and low Ron*Coff and noise figure performance that enables strong, reliable signals in switches and low noise amplifiers (LNAs). Chip designers can harness this combination of benefits to incorporate switches, LNAs, PAs and logic in monolithic Wi-Fi FEMs optimized for small form factors and long battery life, while reducing overall system bill of materials cost.
Differentiated EDNMOS power device delivers the must-have low Rdson, and high BVdss and ft/fmax for PAs in integrated, next-gen Wi-Fi FEMs.
The combination of a novel EDNMOS PA device with high-linearity transmit performance with all-copper interconnects and ultra thick copper layers that boost power-handling capability enables consumers to enjoy broader wireless coverage with strong signals.
By offering low leakage, high integration and excellent RF performance benefits, 130RFSOI enables designers to develop area- and power-optimized solutions that save space for other advanced features and boost battery life, while keeping systems costs in check.
130RFSOI is a silicon-proven, mature solution built in GF’s high-volume 300 mm Singapore manufacturing facility, distinguished by its record of on-time delivery and manufacturing excellence. Get your product to market even faster with a full range of RF turnkey services and a design demonstrator package for first-time-right results.
Wi-Fi FEM switches, LNAs and PAs using 8SW and SiGe PA solutions
The GLOBALFOUNDRIES® (GF®) 8SW RF SOI and family of SiGe PA solutions (SiGe 5PAe, 1KW5PAe, 5PAx and 1K5PAx) are optimized to help design engineers meet these requirements in future-ready Wi-Fi front-end module (FEM) switches, low noise amplifiers (LNAs) and power amplifiers (PAs). Combined, the solutions enable a high-performance, power and area-efficient two chip Wi-Fi FEM design for high-end to mid-tier smartphones, tablets, notebook computers, access points and IoT devices.
8SW arms design engineers with a cost-effective, low power and highly flexible solution for Wi-Fi switches and LNAs. 8SW-based switches offer superior Ron*Coff and insertion loss (IL) combined with high Pmax to help extend Wi-Fi signal coverage and battery lifetime, while LNAs built on 8SW are designed to deliver the low noise figures and high gain needed for uninterrupted, farther reaching Wi-Fi connections.
The SiGe PA portfolio complements 8SW solutions, enabling chip designers to meet demanding next-gen Wi-Fi specifications by harnessing high Psat, high PAE and exceptional error vector magnitude (EVM) performance for broader Wi-Fi coverage, longer battery life and stronger Wi-Fi connections.
8SW is industry’s 1st fully qualified high-volume RF SOI Foundry solution on 300 mm wafers.
GF has shipped more than eight billion SiGe PA chips globally.
8SW’s best-in-class Ron*Coff, all-copper interconnects and high-stacking capability that boost power-handling capacity can help make Wi-Fi connections seamless, with improved battery efficiency. It delivers up to 50% better switch performance efficiency and 50% smaller chip area, while reducing power consumption as much as 70%.†
Featuring 10% more gain and 7% lower noise figure combined with a >5x better figure of merit *, LNAs developed using 8SW offer the reliable, robust Wi-Fi connections for the enhanced mobile broadband that businesses, consumers and organizations now count on.
Balance performance and value using the wide range of RF features in our SiGe PA solutions. The solutions feature production-proven through-silicon vias (TSVs) so designers can leverage low-cost packages, while offering outstanding EVM combined with high Psat and PAE that boost battery life, coverage and signal strength.
† Compared to GF 7SW solutions; benefits will vary with design.
Integrated Wi-Fi FEM SoCs using 22FDX™ RF and 22FDX RF
22FDX RF allows designers to leverage digital scaling advantages combined with high power-handling, high performance power amplifiers (PAs) and switches to develop single-chip Wi-Fi SoCs with integrated Bluetooth and Wi-Fi capabilities. 22FDX RF+ builds on our 22FDX RF solution with performance and power benefits and Wi-Fi specific features.
22FDX RF+ is designed to offer 30% better Ron*Coff and insertion loss performance, enabling stronger, more reliable connections.*
22FDX RF and RF+ build on the production-proven 22FDX platform and mature PDK so customers can be confident hardware will perform as expected, with high-volume manufacturing offering supply assurance. A shared IP ecosystem simplifies IP reuse and enables backwards compatibility.
Design engineers can leverage Wi-Fi optimized RF switch and PA features to meet next-generation Wi-Fi power-handling and performance specifications. Differentiated 3.3 V LDMOS devices available in 22FDX RF and RF+ have been customized for integrated PA applications in Wi-Fi SoCs.
22FDX RF and RF+ enable designers to integrate multiple wireless connectivity functions into a one chip for packaging and cost efficiencies—up to 25% cost savings compared to a two-chip GaAs/RF SOI solution†—while enabling providers to take advantage of the saved space for other consumer-pleasing features
*Compared to 22FDX RF.
†Results will vary with chip/system design.
Integrated Wi-Fi FEM SoCs using 12LP RF
The GLOBALFOUNDRIES® (GF®) 12LP RF solution, based on mature 12LP and 14LPP GF FinFET solutions, features excellent digital performance, power and area advantages paired with a strong RF figure of merit, making it great choice for single-chip SoCs with integrated Bluetooth and Wi-Fi capabilities.
10% smaller bitcell area and >20% smaller logic area compared to 16 nm FinFET solutions.
Builds upon GF’s established 14 nm & 12 nm platforms, of which GF has shipped more than one million wafers.
12LP RF’s high power-handling PA capabilities, paired with a low-voltage device that offers significant power savings, help designers extend battery life so consumers can enjoy Wi-Fi connectivity for longer before worrying about recharging.
By combining a low LNA noise figure and high LNA gain with high PAE PA performance, 12LP RF enables designers to develop integrated Wi-Fi FEM chips that deliver robust signal coverage over broad distances for the enhanced wireless experiences consumers count on.
With a 12 nm FinFET platform for extensive digital integration, a high-density SRAM and an advanced design library, 12LP RF enables designers to develop small form-factor Wi-Fi SoCs that take up less space or to integrate more features in the same SoC footprint for bill-of-material efficiencies.