Silicon Germanium BiCMOS (SiGe)

GLOBALFOUNDRIES silicon germanium (SiGe) technology caters to a range of wireless technologies, especially high frequency and low noise applications. These solutions are supported by complete models and design kits to facilitate various design needs. GLOBALFOUNDRIES 0.35 micron SiGe BiCMOS is capable of a peak fT of 50 GHz and peak fmax of 60 GHz, while the 0.18 micron process can achieve a peak fT and peak fmax of 100 GHz.

Other features include high-density stacked MiM capacitors, thick top metal inductors and hyper-abrupt varactors.