Leading-Edge Technologies
GLOBALFOUNDRIES 45nm Super High Performance (SHP) technology is in volume production at Fab 1, with an expected transition to 32nm high-k Metal Gate (HKMG) in 2010. The SHP technology is manufactured on a Silicon on Insulator (SOI) substrate which enables a reduction in parasitic capacitance to increase performance at lower power consumption for demanding applications such as x86 CPU's.
Our 28nm technologies are based on industry-standard bulk silicon substrates. These technologies share many of the advanced technology elements of our SOI offerings. The 28nm High Performance (HP) and Super Low Power (SLP) technologies are designed for a wide variety of applications from high-performance graphics and wired networking to low-power wireless mobile applications that require long battery lifetime. Both HP and SLP utilize HKMG technology for superior control of the channel with high on currents and low leakage current. The 28nm technology offers the smallest SRAM cell size (0.120 µm2) currently reported in the foundry industry, delivering more than twice the gate density of industry standard 40nm processes. At 28nm, GLOBALFOUNDRIES will be on the second generation of HKMG technology and the third generation of immersion lithography. And since the 28nm technology is a direct shrink of 32nm, customers will benefit greatly from the high-volume ramp of our 32nm-SHP technology.
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