GLOBALFOUNDRIES is the first foundry to ramp high volume manufacturing of High-k Metal Gate 32/28nm technology. GLOBALFOUNDRIES' ability to offer advanced process technology is powered by its highly successful and efficient collaborative R&D model centered on the joint development alliance (JDA) with several world leading product companies including IBM, Renesas, STMicroelectronics, Samsung Electronics, and Toshiba. With this alliance, GLOBALFOUNDRIES is driving the global standard for new technologies such as High-k Metal Gate. As a founding member of the JDA starting from 90nm, GLOBALFOUNDRIES has been able to leverage the collaborative R&D model to reduce the cost of process R&D that is projected to reach more than $1B US for 22nm and below. GLOBALFOUNDRIES embraces a collaborative approach to innovation that combines a shared objective with a shared investment strategy with partners around the world. The company's partnerships range from early-stage R&D, to the evaluation of production-ready process technologies, to the enablement of physical design kits (PDK), to the shared IPs, and finally to the services and support provided by 3rd party design partners. The company's goal is to provide its customers accelerated access to the most advanced technologies, manufacturing processes and design solutions available.
Broad Technology StrategyGLOBALFOUNDRIES is harnessing its leadership in a broad range of technologies to provide customers with three categories of process technologies. With technologies ranging from Leading-Edge, Advanced and Base, GLOBALFOUNDRIES provides a breadth and depth of solutions that addresses the diversity and customer that are reliant on semiconductor products.
Leading-Edge technologies includes 45nm and smaller geometries with 32/28nm products in current production. Advanced technologies include 90nm and 65nm process geometries, and Base technologies include 0.11um and larger geometries. Valued-Added-Solution process modules such as Non-Volatile Memories, High Voltage and RF are available across the various process geometries.