Collaboration and Innovation

The costs associated with research and development for advanced technology nodes are projected to reach more than $1 billion at the 22nm node and beyond. At GLOBALFOUNDRIES, we embrace a collaborative approach to innovation that combines a shared objective with a shared investment by partners around the world. Our partnerships range from early-stage R&D to the evaluation of production-ready process technologies, providing our customers accelerated access to the most advanced technologies and manufacturing processes.

In conjunction with the joint development alliance partners centered in East Fishkill, New York that include Freescale, IBM, Infineon, NEC, ST, Samsung, Toshiba, we have produced continued enhancements in the performance and efficiency of transistors and interconnects, the two fundamental building blocks of chip designs. GLOBALFOUNDRIES and its development partners offer a long list of impressive innovations, with the most recent being high K metal gate technology introduced for the 32/28nm nodes.

Other technology "firsts" that flowed from this collaborative model include:

First to build a complete factory around integration of copper metal in the process flow as a replacement for aluminum in building interconnects
First microprocessor vendor to insert immersion lithography into its fab tool set
First to apply enhanced strain technology using dual-stress liners in its transistors
First to volume production with low-K interconnect material
First "full field" demonstration of next-generation Extreme Ultra Violet (EUV) lithography resulting in a working test chip

Collaboration and Innovation

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