GLOBALFOUNDRIES Offers New Low-Power 28nm Solution for High-Performance Mobile and IoT Applications

GLOBALFOUNDRIES announced it is offering a 28nm High-k Metal Gate (HKMG) radio frequency (RF) process technology that will provide power-efficient solutions and designs for highly integrated mobile devices and connected devices. Full design enablement and optimized RF process design kits (RF PDKs) offer design flexibility in core RF performance and functionality. GLOBALFOUNDRIES is the first pure-play foundry to develop 28nm HKMG technology complete with radio frequency (RF) modelling.

Samsung and GLOBALFOUNDRIES Jointly Offer Design-Ready ARM Artisan Physical IP Platform on 14nm FinFET Technology

Samsung Electronics Co., Ltd. and GLOBALFOUNDRIES announced the availability of a complete ARM physical IP foundation platform for Samsung’s leading-edge 14-nanometer (nm) FinFET semiconductor manufacturing technology. This demonstrates the partners’ progress beyond technology synchronization into the creation of key ecosystem initiatives, and enables customers to take advantage of a single design and manufacturing process at both foundries using the same 14nm FinFET technology.

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Latest Updates from GLOBALFOUNDRIES

GLOBALFOUNDRIES Offers New Low-Power 28nm Solution for High-Performance Mobile and IoT Applications (details)

Technical Webinar Series:
14nm Digital Design Reference Flows (details)

CDNLive 2015 video interview on 14nm progress and collaboration (details)